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100 1000 10000 2SD1025 0.1 1 10 v ce = 3v pulse width = 300 m s h fe - i c 12 tc = 150 c 100 c 50 c 25 c 0 c - 25 c - 55 c collector current i c [a] dc current gain h fe
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 2SD1025 1 10 100 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 i c = 0.5a 1a 3a 5a 8a 12a tc = 25 c pulse measurement saturation voltage i c = 0.5a 1a 3a 5a 8a 12a 200 base current i b [ma] collector-emitter voltage v ce [v] base-emitter voltage v be [v]
1 10 0 1 2 3 4 5 6 7 8 2SD1025 i b1 = 0.002i c i b2 = 0.002i c v bb2 = 4v v cc = 50v tc = 25 c t s t on t f switching time - i c collector current i c [a] switching time t sw [ m s]
1 10 0 50 100 150 2SD1025 i c = 5a i b1 = 10ma i b2 = 10ma v bb2 = 4v v cc = 50v t s t on t f switching time - tc case temperature tc [ c] switching time t sw [ m s]
transient thermal impedance 0.1 1 2SD1025 10 -2 10 -1 10 0 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 0.005~5 [ms] 0.005~5 [s] time t [s, ms] transient thermal impedance q jc(t) [ c/w]
forward bias soa 0.1 1 10 10 100 2SD1025 tc = 25 c single pulse 150 m s 1ms 10ms dc 12 200 collector-emitter voltage v ce [v] collector current i c [a]
0 20 40 60 80 100 0 50 100 150 2SD1025 collector current derating collector current derating [%] v ce = fixed p t limit i s/b limit case temperature tc [ c]

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